Electron Microscopy

– Resolution 0.7 nm @ 1 keV, 0.6 nm @ 2-30 keV
– Automatic LoadLock
– CCD IR inspection camera
– Beam deceleration
– Integrated Plasma cleaner
– Oil-free pumping system
– Electron detectors;
-ETD (Everhardt Thornley Detector)
-TLD (Through the Lens Detector)
-MD (Mirror Detector) mounted inside the objective lens; compositional and topographic contrast
-ICD (in-Column Detector) 10 cm above the MD in the column; reduced topographical but highlights compositional contrast
-BSD (Back Scatter Detector) retractable, inserted below the pole piece with 4 different concentric segments
-STEM (Scanning Transmission Electron Microscopy detector) retractable, BF DF HAADF (High Angle Angular Dark Field)
– Energy Dispersive Spectroscopy (EDS) Oxford Xmax 80 mm^2 127eV Silicon Drift Detector
– Electron Backscatter Diffraction (EBSD) detector

It is equipped with the following detectors: the Everhart-Thornley SE detector that collects SE2 electrons and provide topographical information; the high efficiency in-lens detector collects SE1 electrons and provide high resolution surface information; the EsB detector (Energy selective Backscattered) integrated in the Gemini objective lens that collects BS electrons at low voltages and provides low-loss BSE information; the BSD detector (Angular Selective Backscattered) that provides channeling, crystallographic and strain contrasts in addition to compositional or topography information; the VPSE detector (Variable Pressure Secondary Electrons) allowing imaging at low vacuum and the STEM detector collects transmitted electrons of thin samples at several modes (dark field (DF), oriented dark field (ODF), annular dark field (ADF) and high angle annular dark field (HAADF).
The SEM is also equipped with an EDS detector (Bruker XFlash 6, 60mm) and a cryo stage (Leica) for cryo-imaging of soft-materials including biological samples.

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System:

1. Source:

• X-CFEG: Ultra-high-brightness cold field emission gun with energy resolution of < 0.4 eV.
• Flexible high-tension range from 30 – 200 kV.

2. Optical column and corrector:

• Three lens condenser illumination system
• S-CORR probe corrector provides sub-Angstrom imaging resolution at 60 kV as specification and an order of magnitude improvement in optical stability. The S-CORR corrects A5 for all accelerating voltages.
• Symmetric S-TWIN objective lens with widegap pole piece design of 5.4 mm allows double tilt of ± 30° in alfa and beta.

3. Resolution:

• Information limit: 110 pm
• STEM resolution: 60 pm @ 200 kV and 136 pm @ 60 kV

4. EDS – Super-X detector:

• High-sensitivity, windowless EDS, 4 symmetrical segment detector system based on SDD technology.
• Energy resolution: ≤ 136 eV for Mn-Kα.

Available techniques:

1. TEM imaging with Ceta-M 16M CMOS camera (with speed enhancement) designed for imaging and diffraction applications.
2. STEM imaging with Bright field (BF), Dark field (DF) and/or High Angle Annular Dark Field (HAADF) detectors.
3. TEM tomography.
4. STEM and EDS tomography.
5. iDPC mode (for light elements).
7. Precession diffraction with NanoMegas hardware and software package.

Available acceleration voltages:

1. 200 kV
2. 60 kV

Available holders:

1. Single tilt holder
2. Double tilt low background analytical holder (optimized for EDS analysis)
3. Double tilt hex-lock analytical holder (for magnetic samples)
4. Tomography analytical holder (± 70°)
5. NanoEx™–i/v – single tilt TEM holder for heating and biasing